- Home
- Download Datasheet
- Datasheet PSMN020-150W
PSMN020-150W,127 Datasheet
Datasheet specifications
| Datasheet's name | PSMN020-150W |
|---|---|
| File size | 96.424 KB |
| File type | |
| Number of pages | 7 |
Download Datasheet PSMN020-150W |
Download Datasheet |
|---|
Other documentations
No other documentation was found!
Technical specifications
- Manufacturer: NXP USA Inc.
- Series: TrenchMOS™
- Packaging: Tube
- Part Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 20mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 227nC @ 10V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 9537pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
- Base Part Number: PSMN0
- detail: N-Channel 150V 73A (Tc) 300W (Tc) Through Hole TO-247-3